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| Received
04-Jun-2026 |
Accepted
- |
Published
04-Jun-2026 |
Abstract
The buried-gate GaAs MESFET with front illumination using turning ON channel current been analyzed by
solving continuity equation. This analysis includes the ion implanted buried-gate process. At time ‘t’ is equal to
zero, the light through the optical fiber is turning ‘ON’ has been considered. The channel current has been
evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for microwave
communication.
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